TungstenCVD

The chemical vapor deposition of tungsten is done by using a WF 6 vapor with a gas flow of about 15-60 sccm. Generally, the time of the process is controlled ...

由 PI Lee 著作 · 1989 · 被引用 45 次 — Blanket‐deposited CVD W has been developed and implemented in a 4‐Mbit DRAM and equivalent submicron VLSI technologies. CVD W was applied as contact stud, ...

由 WK Yeh 著作 · 1996 · 被引用 5 次 — This work investigates the basic deposition properties of selective tungsten chemical vapor deposition (W-CVD) using the process of silane reduction of WF6 ...

2015年12月2日 — The most common CVD reaction for tungsten is tungsten hexaflouride plus hydrogen and silane. The hydrogen bonds with the flourine atoms, ...

由 KM Chang 著作 · 1997 · 被引用 4 次 — Chemical vapor deposition of tungsten (CVD-W) has been proposed to be an important metallization technique in ultralarge-scale integrated circuit (ULSI) ...

由 WK Yeh 著作 · 1995 · 被引用 7 次 — This work investigates the deposition properties of selective chemically vapor-deposited tungsten for filling the deep sub-half micron contact holes using ...

CVD Tungsten. Chemical Vapour Deposition is a technique of depositing a wide variety of layers from conductors to epitaxial semiconductors to insulators. All ...

由 葉達勳 著作 · 1996 — 化學氣相沉積;鎢;選擇率;預清潔工作;擴散障礙層;熱穩定度;CVD;Tungsten;Selectivity;Precleaning;Diffusion barrier;Thermal stability. 公開日期: 1996. 摘要: 本論文 ...